SI4922DY vishay siliconix new product document number: 71309 s-20112?rev. b, 11-mar-02 www.vishay.com 1 dual n-channel 30-v (d-s) mosfet product summary v ds (v) r ds(on) ( ) i d (a) 0.016 @ v gs = 10 v 8.8 30 0.018 @ v gs = 4.5 v 8.3 0.024 @ v gs = 2.5 v 7.2 s 1 d 1 g 1 d 1 s 2 d 2 g 2 d 2 so-8 5 6 7 8 top view 2 3 4 1 n-channel mosfet d 1 d 1 g 1 s 1 n-channel mosfet d 2 d 2 g 2 s 2 absolute maximum ratings (t a = 25 c unless otherwise noted) parameter symbol 10 secs steady state unit drain-source voltage v ds 30 gate-source voltage v gs 12 v t a = 25 c 8.8 6.7 continuous drain current (t j = 150 c) a t a = 70 c i d 7.1 5.3 pulsed drain current i dm 30 a continuous source current (diode conduction) a i s 1.7 0.9 t a = 25 c 2.0 1.1 maximum power dissipation a t a = 70 c p d 1.3 0.7 w operating junction and storage temperature range t j , t stg ?55 to 150 c thermal resistance ratings parameter symbol typical maximum unit t 10 sec 45 62.5 maximum junction-to-ambient a steady state r thja 85 110 c/w maximum junction-to-foot (drain) steady state r thjf 26 35 c/w notes a. surface mounted on 1? x 1? fr4 board.
SI4922DY vishay siliconix new product www.vishay.com 2 document number: 71309 s-20112 ? rev. b, 11-mar-02 specifications (t j = 25 c unless otherwise noted) parameter symbol test condition min typ max unit static gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 0.60 v gate-body leakage i gss v ds = 0 v, v gs = 12 v 100 na v ds = 24 v, v gs = 0 v 1 zero gate voltage drain current i dss v ds = 24 v, v gs = 0 v, t j = 55 c 5 a on-state drain current a i d(on) v ds 5 v, v gs = 10 v 30 a v gs = 10 v, i d = 8.8 a 0.013 0.016 drain-source on-state resistance a r ds(on) v gs = 4.5 v, i d = 8.3 a 0.015 0.018 v gs = 2.5 v, i d = 7.2 a 0.020 0.024 forward transconductance a g fs v ds = 15 v, i d = 8.8 a 30 s diode forward voltage a v sd i s = 1.7 a, v gs = 0 v 0.8 1.2 v dynamic b total gate charge q g 22 33 gate-source charge q gs v ds = 15 v, v gs = 4.5 v, i d = 8.8 a 5.8 nc gate-drain charge q gd 5.8 turn-on delay time t d(on) 12 24 rise time t r v = 15 v, r = 15 10 20 turn-off delay time t d(off) v dd = 15 v, r l = 15 i d 1 a, v gen = 10 v, r g = 6 75 150 ns fall time t f 26 50 source-drain reverse recovery time t rr i f = 1.7 a, di/dt = 100 a/ s 30 60 notes a. pulse test; pulse width 300 s, duty cycle 2%. b. guaranteed by design, not subject to production testing. typical characteristics (25 c unless noted) 0 6 12 18 24 30 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 6 12 18 24 30 012345 v gs = 10 thru 3 v t c = 125 c ? 55 c 1 v 25 c output characteristics transfer characteristics v ds ? drain-to-source voltage (v) ? drain current (a) i d v gs ? gate-to-source voltage (v) ? drain current (a) i d 2 v
SI4922DY vishay siliconix new product document number: 71309 s-20112 ? rev. b, 11-mar-02 www.vishay.com 3 typical characteristics (25 c unless noted) ? on-resistance ( r ds(on) ) 0 500 1000 1500 2000 2500 3000 3500 0 6 12 18 24 30 0.6 0.8 1.0 1.2 1.4 1.6 ? 50 ? 25 0 25 50 75 100 125 150 0 2 4 6 8 10 0 1020304050 0.00 0.01 0.02 0.03 0.04 0.05 0.06 0 6 12 18 24 30 v ds ? drain-to-source voltage (v) c oss c iss v ds = 15 v i d = 8.8 a i d ? drain current (a) v gs = 10 v i d = 8.8 a v gs = 10 v v gs = 2.5 v gate charge on-resistance vs. drain current ? gate-to-source voltage (v) q g ? total gate charge (nc) c ? capacitance (pf) v gs capacitance on-resistance vs. junction temperature t j ? junction temperature ( c) (normalized) ? on-resistance ( r ds(on) ) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.00 0.01 0.02 0.03 0.04 0.05 0.06 0246810 t j = 150 c i d = 8.8 a 30 10 1 source-drain diode forward voltage on-resistance vs. gate-to-source voltage ? on-resistance ( r ds(on) ) v sd ? source-to-drain voltage (v) v gs ? gate-to-source voltage (v) ? source current (a) i s t j = 25 c v gs = 4.5 v c rss
SI4922DY vishay siliconix new product www.vishay.com 4 document number: 71309 s-20112 ? rev. b, 11-mar-02 typical characteristics (25 c unless noted) 0 30 50 10 20 power (w) single pulse power time (sec) 40 10 ? 3 10 ? 2 1 10 600 10 ? 1 10 ? 4 100 ? 0.6 ? 0.4 ? 0.2 ? 0.0 0.2 0.4 ? 50 ? 25 0 25 50 75 100 125 150 i d = 250 a 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 threshold voltage variance (v) v gs(th) t j ? temperature ( c) normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) normalized effective transient thermal impedance 1. duty cycle, d = 2. per unit base = r thja = 85 c/w 3. t jm ? t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm 10 ? 3 10 ? 2 110 10 ? 1 10 ? 4 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 normalized thermal transient impedance, junction-to-foot square wave pulse duration (sec) normalized effective transient thermal impedance 1 100 600 10 10 ? 1 10 ? 2
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